Fluctuations of electrical and mechanical properties of diamond induced by interstitial hydrogen*
Zhuang Chun-Qianga)†, Liu Leib)
Fig.#cod#x00A0;6. Fluctuations of electrical properties of diamond induced by the interstitial hydrogen along the [111] direction. The same Gaussian broadening with a width of about 0.01 eV is used for all the DOS and LDOS. a Specified positions on the [111] direction points a #cod#x2013; e . b Density of states for H-containing diamond with H atoms at positions a #cod#x2013; e . The DOS of pure diamond is also shown for comparison. c Local density of states LDOS and DOS of H-contained diamond with H atom at the body center of the diamond point a in panel a. d LDOS and DOS of H-contained diamond with an H atom at the bond center point f in panel a.