Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN<sub><em> x</em></sub> matrix by the influence of near-interface oxide traps<xref ref-type="fn" rid="cpb141708fn1">*</xref>

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps*

Fang Zhong-Hui, Jiang Xiao-Fan, Chen Kun-Ji†, Wang Yue-Fei, Li Wei, Xu Jun

Fig. 6. C #cod#x2013; V a1 and G #cod#x2013; V a2 characteristics during backward scan for the hole charging process. b Frequency dependence of G #cod#x2013; V characteristics at the full charged state of hole. c Frequency dependence of G #cod#x2013; V characteristics at the partially charged state of hole.