Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN x matrix by the influence of near-interface oxide traps
Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN x matrix by the influence of near-interface oxide traps |
| Fig. 5. C #cod#x2013; V a1 and G #cod#x2013; V a2 characteristics during forward scan for the electron charging process. b Frequency dependence of G #cod#x2013; V characteristics at the uncharged state. c Frequency dependence of G #cod#x2013; V characteristics at the charged state of electron. |
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