Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN x matrix by the influence of near-interface oxide traps
Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN x matrix by the influence of near-interface oxide traps |
| Fig. 4. a Multiple double C #cod#x2013; V sweeps from 0 V to the end voltage and return. The end negative voltage increases from #cod#x2212;6 V to #cod#x2212;11 V. Solid or open symbols used for backward scan or return. b Plots of gate current circle and quasi-static capacitance square verse the gate voltage. The sweep is performed from 0 V to #cod#x2212;11 V. |
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