Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN x matrix by the influence of near-interface oxide traps
Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN x matrix by the influence of near-interface oxide traps |
| Fig. 3. a Multiple double C #cod#x2013; V sweeps from #cod#x2212;3 V to the end voltage and return. The end positive voltage increases from 1 to 5 V. Solid or open symbols used for forward scan or return. b Plots of gate current circle and quasi-static capacitance square verse the gate voltage. The sweep is performed from #cod#x2212;3 to 5 V. |
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