Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN<sub><em> x</em></sub> matrix by the influence of near-interface oxide traps<xref ref-type="fn" rid="cpb141708fn1">*</xref>

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps*

Fang Zhong-Hui, Jiang Xiao-Fan, Chen Kun-Ji†, Wang Yue-Fei, Li Wei, Xu Jun

Fig. 2. C #cod#x2013; V hysteresis is obtained by sweeping from 8 to #cod#x2212;12 V and return. The initial V FB #cod#x223C; #cod#x2212;1.5 V is also obtained by sweeping in a small range 0 to #cod#x2212;3 V. The inset is the C #cod#x2013; V characteristics for the reference sample.