Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN<sub><em> x</em></sub> matrix by the influence of near-interface oxide traps<xref ref-type="fn" rid="cpb141708fn1">*</xref>

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps*

Fang Zhong-Hui, Jiang Xiao-Fan, Chen Kun-Ji†, Wang Yue-Fei, Li Wei, Xu Jun

Fig. 1. Cross sectional HRTEM image of annealed SiO 2 Si-NCs in SiN x SiO 2 c-Si structure.