Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress<xref ref-type="fn" rid="cpb141364fn1">*</xref>

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress*

Sun Wei-Wei^a),^b), Zheng Xue-Feng^a),^b)†, Fan Shuang^a),^b), Wang Chong^a),^b), Du Ming^a),^b), Zhang Kai^a),^b), Chen Wei-Wei^b), Cao Yan-Rong^b), Mao Wei^a),^b), Ma Xiao-Hua^b), Zhang Jin-Cheng^a),^b), Hao Yue^a),^b)

Fig.#cod#x00A0;6. #cod#x0394; V th against Q inj under different on-state gate overdrive stresses on E-mode HEMTs. Q inj denotes the cumulative electrons injected during stress.