Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress |
Fig. 2. a Transfer characteristic and b output characteristic of a fresh E-mode HEMT in this paper. V th #cod#x003D; 0.55 V and G mmax #cod#x003D; 180 mS#cod#x00B7;mm #cod#x2212;1 . |