Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys<xref ref-type="fn" rid="cpb141571fn1">*</xref>

Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys*

Zhao Yi, Zhang Jin-Cheng†, Xue Jun-Shuai, Zhou Xiao-Wei, Xu Sheng-Rui, Hao Yue

Fig. 4. XRD #cod#x03C9; #cod#x2013;2 #cod#x003B8; scan patterns around 0002 reflection of InGaN film samples A, B, C, and D. The AlN mole fraction in the AlGaN templates of samples B, C and D are determined to be 9.71#cod#x0025;, 15.99#cod#x0025;, and 21.46#cod#x0025;, coincided with the designed compositions.