Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys<xref ref-type="fn" rid="cpb141571fn1">*</xref>

Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys*

Zhao Yi, Zhang Jin-Cheng†, Xue Jun-Shuai, Zhou Xiao-Wei, Xu Sheng-Rui, Hao Yue

Fig. 3. PL spectrums of different InGaN samples: a sample A, b sample B, c sample C, and d sample D.