Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys*
Zhao Yi, Zhang Jin-Cheng†, Xue Jun-Shuai, Zhou Xiao-Wei, Xu Sheng-Rui, Hao Yue
Fig. 2. Raman spectra of both InAlNGaN heterostructure samples grown on UPS and PSS with a partial enlarged image shown in the inset.