Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires
Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires |
| Fig. 7. a Comparison of the change of carrier mobility with the stress field between the silicon nanowire of cross-section 6 nm #cod#x00D7; 12 nm and the bulk silicon. [ 46 , 47 ] b The predicted electron mobility varied with the strain based on the present calculations compared with that from the atomistic simulations for #cod#x2329;001#cod#x232A; nanowires. [ 44 ] |
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