Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires
Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires |
| Fig. 3. Acoustic phonon dispersion relations for silicon nanowire with different pre-stress fields. The pre-stresses are #cod#x00B1; 5 GPa. The pre-stress is the lateral stress, which is equal in both transverse directions; and it can arise from the deformation of the substrate in which the wires are assembled or the thermal stress between the substrate and the wires. The cross-section of the nanowire is 6 nm#cod#x00D7;12 nm in panel a and 12 nm#cod#x00D7;24 nm in panel b. |
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