Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires
Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires |
| Fig. 2. Acoustic phonon dispersion relations for silicon nanowire with different applied surface tensions. The nanowire is subjected to the surface stress of #cod#x00B1;5 Nm. The surface stress along the surface direction follows the definition of surface tension, which can be positive and negative; and it can be originated from surface engineering such as changing the surface atoms or redistributing the surface charge. The cross-section of the nanowire is 6 nm#cod#x00D7;12 nm in panel a and 12 nm#cod#x00D7;24 nm in panel b. |
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