Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes |
Fig.#cod#x00A0;11. a Schematics of simulated AND cell, b the hitting X region case, c the hitting W region case, d SET pulse waveforms in layout 5, layout 6, and layout 7 LET #cod#x003D; 50 MeV#cod#x00B7;cm 2 mg, ions strike at the X region. |