Al-doping influence on crystal growth of Ni–Al alloy: Experimental testing of a theoretical model |
XRD spectra of Ni–Al films with 3 wt% Al-doping grown with a laser energy density of 7 J/cm2 and post-annealed at 833 (b), 933 (c), 1033 (d), 1133 (e), and 1233 K (f) on Si (100) substrate. The inset shows the FWHM of the Ni (111) diffraction peak as a function of the annealing temperature. |