Investigation of trap states in Al<sub>2</sub>O<sub>3</sub> InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Investigation of trap states in Al₂O₃ InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Zhang Peng†^a), Zhao Sheng-Lei^b), Xue Jun-Shuai^b), Zhu Jie-Jie^a), Ma Xiao-Hua^a), Zhang Jin-Cheng^b), Hao Yue^b)

(a) Time constant of trap states as a function of gate voltages. (b) Trap state density as a function of energy E _t.