Investigation of trap states in Al<sub>2</sub>O<sub>3</sub> InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Investigation of trap states in Al₂O₃ InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Zhang Peng†^a), Zhao Sheng-Lei^b), Xue Jun-Shuai^b), Zhu Jie-Jie^a), Ma Xiao-Hua^a), Zhang Jin-Cheng^b), Hao Yue^b)

Experimental (symbols) and fitting (lines) G _p/ ω versus radial frequency near the accumulation region. The inset shows the equation that is used to evaluate the trap density and time constant.