High- k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment
Liu Chao-Wen, Xu Jing-Ping†
, Liu Lu, Lu Han-Han
, Liu Lu, Lu Han-Han 
High- k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment |
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Liu Chao-Wen, Xu Jing-Ping†
, Liu Lu, Lu Han-Han |
| As 3d XPS spectra of the two plasma-treated samples. (a) NH3-HfTiON/LaON sample and (b) N2-HfTiON/LaON sample. |
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