High- k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment
Liu Chao-Wen, Xu Jing-Ping†
, Liu Lu, Lu Han-Han
, Liu Lu, Lu Han-Han 
High- k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment |
|
Liu Chao-Wen, Xu Jing-Ping†
, Liu Lu, Lu Han-Han |
| Ti 2p XPS spectra of the NH3-HfTiON/LaON and N2-HfTiON/LaON samples. |
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