Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC
Zhou Tian-Yua),b), Liu Xue-Chao†a), Huang Weia), Zhuo Shi-Yia), Zheng Yan-Qinga), Shi Er-Weia)
       
Schematic illustrations of the microstructure evolutions of Ni/Ta/6H–SiC annealed at different temperatures. (a) The initial stage at 750 °C, (b) the transition stage at 850 °C–950 °C, (c) the final stage at 1050 °C.