Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H

Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC

Zhou Tian-Yu^a),^b), Liu Xue-Chao†^a), Huang Wei^a), Zhuo Shi-Yi^a), Zheng Yan-Qing^a), Shi Er-Wei^a)

I – V characteristic of (a) Ni(80 nm)/Ta (10, 20, 30, 40 nm)/6H–SiC (b) Ni(80 nm)/Ta (50, 70, 90, 110 nm)/6H–SiC annealed at 1050 °C in Ar atmosphere for 2 min.