Interfacial and electrical characteristics of a HfO2/n–InAlAs MOS-capacitor with different dielectric thicknesses
Guan He, Lv Hong-Liang, Guo Hui†, Zhang Yi-Men, Zhang Yu-Ming, Wu Li-Fan
       
J leakage– V g test result of HfO2/n–InAlAs MOS-capacitor with different t ox values.