Interfacial and electrical characteristics of a HfO
2
/n–InAlAs MOS-capacitor with different dielectric thicknesses
Guan He, Lv Hong-Liang, Guo Hui†
, Zhang Yi-Men, Zhang Yu-Ming, Wu Li-Fan
J
leakage
– V
g
test result of HfO
2
/n–InAlAs MOS-capacitor with different t
ox
values.