Interfacial and electrical characteristics of a HfO<sub>2</sub>/n–InAlAs MOS-capacitor with different dielectric thicknesses

Interfacial and electrical characteristics of a HfO₂/n–InAlAs MOS-capacitor with different dielectric thicknesses

Guan He, Lv Hong-Liang, Guo Hui†, Zhang Yi-Men, Zhang Yu-Ming, Wu Li-Fan

Interface trap density D _it of HfO₂/n–InAlAs MOS-capacitor with different t _ox. ( E _t − E _i) presents the distance from the energy level of the interface trap state ( E _t) to the intrinsic Fermi level ( E _i).