Interfacial and electrical characteristics of a HfO2/n–InAlAs MOS-capacitor with different dielectric thicknesses
Guan He, Lv Hong-Liang, Guo Hui†, Zhang Yi-Men, Zhang Yu-Ming, Wu Li-Fan
       
Interfacial oxide performances with different t ox values of 6 nm and 10 nm (a) interfacial XPS spectra measurements for O1s and (b) various oxide ratios.