Interfacial and electrical characteristics of a HfO<sub>2</sub>/n–InAlAs MOS-capacitor with different dielectric thicknesses

Interfacial and electrical characteristics of a HfO₂/n–InAlAs MOS-capacitor with different dielectric thicknesses

Guan He, Lv Hong-Liang, Guo Hui†, Zhang Yi-Men, Zhang Yu-Ming, Wu Li-Fan

Measured results by XPS after PDA process (a) As 3d, (b) In 3d_5/2, (c) Hf 4f, (d) O 1s.