Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Lü Hai-Yan^a), Mu Qi^a), Zhang Lei^a), Lü Yuan-Jie^b), Ji Zi-Wu†^a), Feng Zhi-Hong^b), Xu Xian-Gang^c), Guo Qi-Xin‡^d)

(a) Temperature dependences of the FE(2S) (•) and I _bh (○) peak energies shown in Fig. 4 . The dashed line represents the theoretical fit by Eq. ( 1 ). (b) Temperature dependence of the energy separation (Δ E ) between the FE(2S) and the I _bh emission peaks. The solid line is the least-squares fit of data with Eq. ( 4 ).