Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Lü Hai-Yan^a), Mu Qi^a), Zhang Lei^a), Lü Yuan-Jie^b), Ji Zi-Wu†^a), Feng Zhi-Hong^b), Xu Xian-Gang^c), Guo Qi-Xin‡^d)

Excitation power dependences of the I _a peak energy and intensity shown in Fig. 1 . T = 6 K.