Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE
Lü Hai-Yana), Mu Qia), Zhang Leia), Lü Yuan-Jieb), Ji Zi-Wu†a), Feng Zhi-Hongb), Xu Xian-Gangc), Guo Qi-Xin‡d)
       
(a) PL spectrum of the ZnTe epilayer in a photon energy range of 1.90 eV–2.41 eV measured at 2 μW. (b) Excitation power-dependent PL spectra of the ZnTe epilayer in a range of 2.27 eV–2.41 eV. The inset shows the further enlarged PL spectrum including the I a, I c, and FE peaks at 40 mW. T = 6 K.