Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE |
(a) PL spectrum of the ZnTe epilayer in a photon energy range of 1.90 eV–2.41 eV measured at 2 μW. (b) Excitation power-dependent PL spectra of the ZnTe epilayer in a range of 2.27 eV–2.41 eV. The inset shows the further enlarged PL spectrum including the I a, I c, and FE peaks at 40 mW. T = 6 K. |