Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation
Yu Jun-Tinga) 
, Chen Shu-Minga), b) , Chen Jian-Juna) , Huang Peng-Chenga)
, Chen Shu-Ming
Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation |
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Yu Jun-Ting
, Chen Shu-Ming |
| Hole current flowing in 50-nm fin-width FinFET at different times after ion strike. (a) t = 100 ps; (b) t = 200 ps. |
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