Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation<xref ref-type="fn" rid="cpb150552fn1">*</xref>

Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation*

Yu Jun-Ting^a), Chen Shu-Ming^a),^b), Chen Jian-Jun^a), Huang Peng-Cheng^a)

Potential profiles in 50-nm fin-width FinFET at different times before and after ion strike. (a) A cut line along the source-fin-drain ( x axis). (b) A cut line along the source-well-drain ( x axis), which are shown in Fig. 5 as white dot lines, 20 nm above and below the bottom of source/drain region, respectively. The ion LET is 10 MeV·cm²/mg.