Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation
*
Yu Jun-Ting
a)
, Chen Shu-Ming
a),
b)
, Chen Jian-Jun
a)
, Huang Peng-Cheng
a)
Parasitic bipolar junction transistors (BJTs) in bulk p -FinFET.