Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation
Yu Jun-Tinga) 
, Chen Shu-Minga), b) , Chen Jian-Juna) , Huang Peng-Chenga)
, Chen Shu-Ming
Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation |
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Yu Jun-Ting
, Chen Shu-Ming |
| (a) Current curves captured at the drain/source terminals in a 50-nm fin-width FinFET. (b) The corresponding charge collection versus time for the drain/source terminals. The ion LET is 10 MeV·cm2/mg. |
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