Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation
Yu Jun-Tinga) 
, Chen Shu-Minga), b) , Chen Jian-Juna) , Huang Peng-Chenga)
, Chen Shu-Ming
Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation |
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Yu Jun-Ting
, Chen Shu-Ming |
| (a) The amount of charge collection in FinFET and diode devices with different fin widths; (b) corresponding bipolar amplification for different fin-width FinFETs; (c) the SET voltage at FWHM for different fin-width FinFETs. All simulations are conducted with the same ion LET at 10 MeV·cm2/mg. |
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