Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation
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Yu Jun-Ting
a)
, Chen Shu-Ming
a),
b)
, Chen Jian-Jun
a)
, Huang Peng-Cheng
a)
Comparison of SET pulse width between two fin-width FinFETs with the same effective width as a function of the ion LETs.