Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Chen Long^a),^b), Payne Justin^b), Strate Jan^b), Li Cheng^b), Zhang Jian-Ming^b), Yu Wen-Jie^a), Di Zeng-Feng^a), Wang Xi^a)

Electroluminescence spectra of semi-polar InGaN/GaN microstripe LED at various drive current levels. Spectra are dominated by a peak at 475 nm that does not shift so much when current increases fivefold. The insert show the I – V characteristics and the light output power.