Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Chen Long^a),^b), Payne Justin^b), Strate Jan^b), Li Cheng^b), Zhang Jian-Ming^b), Yu Wen-Jie^a), Di Zeng-Feng^a), Wang Xi^a)

Cross-sectional analysis of the GaN-based microstripes in the Si grooves. (a) Bright-field TEM image of the entire stripe revealing dislocations and interface. (b) Selective area electron diffraction pattern (SAED) of the GaN area. (c) STEM of the QW portion.