Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Chen Long^a),^b), Payne Justin^b), Strate Jan^b), Li Cheng^b), Zhang Jian-Ming^b), Yu Wen-Jie^a), Di Zeng-Feng^a), Wang Xi^a)

Traces of in-situ measurements for the whole growth process of GaN epilayer. (a) Optical reflectivity on 4-inch Si (111). (b) Wafer curvature on different substrates: sample A, Si (111) and sample B, Si (100).