Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Chen Long^a),^b), Payne Justin^b), Strate Jan^b), Li Cheng^b), Zhang Jian-Ming^b), Yu Wen-Jie^a), Di Zeng-Feng^a), Wang Xi^a)

(a) Cross-sectional SEM and (b) the bird-view SEM images of GaN on V-grooved Si (100) substrate, respectively.