Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Chen Long^a),^b), Payne Justin^b), Strate Jan^b), Li Cheng^b), Zhang Jian-Ming^b), Yu Wen-Jie^a), Di Zeng-Feng^a), Wang Xi^a)

(a) 4-inch Si (100) wafer with SiO₂ mask. (b) Trenches are developed by KOH. (c) MOCVD growth on Si (111) facets. (d) LED layer stack used on Si(111) substrate and patterned Si (100) substrate.