Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE<xref ref-type="fn" rid="cpb151032fn1">*</xref>

Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE*

Chen Wei-Jie^a),^b), Han Xiao-Biao^a),^b), Lin Jia-Li^a),^b), Hu Guo-Heng^a),^b), Liu Ming-Gang^a),^b), Yang Yi-Bin^a),^b), Chen Jie^a),^b), Wu Zhi-Sheng^a),^b), Liu Yang^b), Zhang Bai-Jun^a),^b)

(a) Diagram of the source supply paths in selective MOVPE. (b) SEM images of GaN selectively grown on patterned templates with different periods. The patterned mask’s period of sample (i) is 60 μm and that of sample (ii) is 12 μm.