In-situ spectroscopic studies and interfacial engineering on FeSe/oxide heterostructures: Insights on the interfacial superconductivity*
Peng Ruia),b), Xu Hai-Chaoa),b), Feng Dong-Laia),b)
       
(a)–(c) The photoemission intensity taken around normal emission for the STO substrate after degassing at 550 °C for 3 h, the STO substrate after 30 min heat treatment at 950 °C under a Se flux, and 1 ML FeSe, respectively. Panels (a)–(c) are reprinted with permission from Ref. [ 9 ], copyright 2012 by Nature Materials.