AlGaN/GaN high electron mobility transistor with Al2O3+BCB passivation
Zhang Shenga),b), Wei Keb), Yu Lea),b), Liu Guo-Guob), Huang Senb), Wang Xin-Huab), Pang Leib), Zheng Ying-Kuib), Li Yan-Kuib), Ma Xiao-Huaa), Sun Bingb), Liu Xin-Yub)
       
(a) C – V characteristics of Al2O3+BCB passivation HEMT, and the reverse capacitance shown in the inset. (b) C – V characteristics of SiN passivation HEMT.