AlGaN/GaN high electron mobility transistor with Al<sub>2</sub>O<sub>3</sub>+BCB passivation

AlGaN/GaN high electron mobility transistor with Al₂O₃+BCB passivation

Zhang Sheng^a),^b), Wei Ke^b), Yu Le^a),^b), Liu Guo-Guo^b), Huang Sen^b), Wang Xin-Hua^b), Pang Lei^b), Zheng Ying-Kui^b), Li Yan-Kui^b), Ma Xiao-Hua^a), Sun Bing^b), Liu Xin-Yu^b)

Small-signal characteristics of SiN passivation HEMT. (a) V _ds = 6 V, V _gs = −1.5 V; (b) V _ds = 28 V, V _gs = −1.5 V.