Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-<em> k</em>/metal gate last process<xref ref-type="fn" rid="cpb151517fn1">*</xref>

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k/metal gate last process*

Wang Yan-Rong, Yang Hong, Xu Hao, Wang Xiao-Lei, Luo Wei-Chun, Qi Lu-Wei, Zhang Shu-Xiang, Wang Wen-Wu, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun

Weibull distribution of HfO₂ gate stack MOSCAP tested under V _g = 3.6 V at room temperature, showing (a) the weibull distribution of samples with only one D&A cycle and (b) the weibull distribution of samples with multi D&A cycles.