Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-<em> k</em>/metal gate last process<xref ref-type="fn" rid="cpb151517fn1">*</xref>

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k/metal gate last process*

Wang Yan-Rong, Yang Hong, Xu Hao, Wang Xiao-Lei, Luo Wei-Chun, Qi Lu-Wei, Zhang Shu-Xiang, Wang Wen-Wu, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun

Si 2p XPS spectra of HfO₂/IL/Si stack. Peak positions are all assigned to C 1s peak binding energy. The results in panels (a) and (b) are obtained using different equipments.