Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k/metal gate last process*
Wang Yan-Rong, Yang Hong, Xu Hao, Wang Xiao-Lei, Luo Wei-Chun, Qi Lu-Wei, Zhang Shu-Xiang, Wang Wen-Wu, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun
       
(a) The I g– V g characteristics and (b) C g– V g characteristics of p-MOSCAPs.