Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors<xref ref-type="fn" rid="cpb151428fn1">*</xref>

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors*

Luo Jun^a), Zhao Sheng-Lei^a), Mi Min-Han^a), Hou Bin^b), Yang Xiao-Lei^b), Zhang Jin-Cheng^a), Ma Xiao-Hua^a),^b), Hao Yue^a)

I – V curves of the nonrecessed SBD, the recessed-gate SBD, and the annealed SBD. The inserted table shows the effective Schottky barrier height Φ _b and the ideality factor n of the three SBDs.