Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors<xref ref-type="fn" rid="cpb151428fn1">*</xref>

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors*

Luo Jun^a), Zhao Sheng-Lei^a), Mi Min-Han^a), Hou Bin^b), Yang Xiao-Lei^b), Zhang Jin-Cheng^a), Ma Xiao-Hua^a),^b), Hao Yue^a)

(a) Trap state time constant as a function of gate voltage. (b) Trap state density as a function of their energy levels.